期刊
APPLIED PHYSICS LETTERS
卷 98, 期 26, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3605571
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资金
- Air Force Office of Scientific Research (AFOSR) [FA9550-09-1-0677]
- Swiss National Science Foundation (SNF) [PBNEP2-124323]
- DARPA [HR0011-10-C-0153]
- Swiss National Science Foundation (SNF) [PBNEP2-124323] Funding Source: Swiss National Science Foundation (SNF)
We report giant reversible and permanent magnetic anisotropy reorientation between two perpendicular easy axes in a magnetoelectric polycrystalline Ni thin film and (011) oriented [Pb(Mg(1/3)Nb(2/3))O(3)]((1-x))-[PbTiO(3)](x) (PMN-PT) heterostructure. The PMN-PT is partially poled prior to Ni film deposition to provide a remanent strain bias. Following Ni deposition and full poling of the sample, two giant remanent strains of equal and opposite values are used to reversibly and permanently reorient the magnetization state of the Ni film. These experimental results are integrated into micromagnetic simulation to demonstrate the usefulness of this approach for magnetoelectric based magnetic random access memory. (C) 2011 American Institute of Physics. [doi:10.1063/1.3605571]
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