期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 51, 期 11, 页码 1913-1917出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2004.836799
关键词
GaN; high-voltage device; power semiconductor device
Undoped AlGaN-GaN power high electron mobility transistors (HEMTs) on sapphire substrate with 470-V breakdown voltage were fabricated and demonstrated as a main switching device for a high-voltage dc-dc converter. The fabricated power HEMT realized a high breakdown voltage with a field plate structure and a low on-state resistance of 3.9 mOmega (.) cm(2), which is 10 x lower than that of conventional Si MOSFETs. The dc-dc converter operation of a down chopper circuit was demonstrated using the fabricated device at the input voltage of 300 V. These results show the promising possibilities of the AlGaN-GaN power HEMTs on sapphire substrate for future switching power devices.
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