期刊
APPLIED PHYSICS LETTERS
卷 98, 期 14, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3572033
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资金
- NSA
- LPS
- ARO [W911-NF-08-1-0482]
- NSF [DMR-0804488]
- DOE [DE-FG02-03ER46028]
- NSF/MRSEC [DMR-0520527]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [0804488] Funding Source: National Science Foundation
We report a robust process for fabrication of surface-gated Si/SiGe quantum dots (QDs) with an integrated superconducting single-electron transistor (SSET) charge sensor. A combination of a deep mesa etch and AlOx backfill is used to reduce gate leakage. After the leakage current is suppressed, Coulomb oscillations of the QD and the current-voltage characteristics of the SSET are observed at a temperature of 0.3 K. Coupling of the SSET to the QD is confirmed by using the SSET to perform sensing of the QD charge state. (C) 2011 American Institute of Physics. [doi:10.1063/1.3572033]
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