期刊
APPLIED PHYSICS LETTERS
卷 97, 期 21, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3519361
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资金
- U.S. Army CERDEC [W15P7T-07-D-P040]
- J. F. Maddox Foundation
We report the epitaxial relationship of VO2 thin-films on c-plane sapphire and their terahertz transmission modulation with temperature. The films exhibit a triple-domain structure caused by the lattice mismatch between monoclinic VO2 and sapphire hexagon. The epitaxial relationship is determined to be VO2[010]parallel to Al2O3[0001] and VO2((2) over bar 02)parallel to Al2O3{11 (2) over bar0}, with the in-plane lattice mismatch of 2.66% (tensile) along [(2) over bar 02] and the out-of-plane lattice mismatch of -2.19% (compressive). Terahertz measurements revealed that VO2 films have over fourfold change in transmission during the metal-insulator transition, indicating a strong potential for terahertz wave switching and modulation applications. (C) 2010 American Institute of Physics. [doi:10.1063/1.3519361]
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