期刊
APPLIED PHYSICS LETTERS
卷 96, 期 24, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3455881
关键词
electron gas; electron spin polarisation; II-VI semiconductors; impurity scattering; interface roughness; magnesium compounds; metal-insulator transition; semiconductor heterojunctions; wide band gap semiconductors; zinc compounds
We analyze experimental results for the mobility of the two-dimensional electron gas as realized in ZnO/MgZnO heterostructures. For zero temperature we calculate the mobility as function of the electron density for charged-impurity and for interface-roughness scattering. Multiple scattering effects, leading to a metal-insulator transition, are taken into account. The results of our calculation are in good agreement with experimental results. The numbers obtained for the parameters of interface-roughness scattering and charged-impurity scattering are reasonable. We argue that the electron gas in this heterostructure might be spin-polarized. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3455881]
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