Efficiency limiting processes in 1.55 μm InAs/InP-based quantum dots lasers

The threshold current density, J(th), and its radiative component, J(rad), in 1.55 mu m InAs/InP (100) quantum dot lasers are measured as a function of temperature and hydrostatic pressure. We find that J(rad) is relatively temperature insensitive. However, J(th) increases significantly with temperature leading to a characteristic temperature T(0)=72 K over the range 220-290 K. Nonradiative recombination accounts for up to 94% of J(th) at T=293 K. J(th) decreases with increasing pressure by 35% over 8 kbar causing an increase in T(0) from 72 to 88 K. The results indicate that nonradiative Auger recombination determines temperature behavior of these devices and T(0) value. (C) 2010 American Institute of Physics. [doi:10.1063/1.3504253]