期刊
APPLIED PHYSICS LETTERS
卷 96, 期 13, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3374884
关键词
gallium arsenide; III-V semiconductors; Monte Carlo methods; photoluminescence
资金
- Materials World Network: III-V Bismide Materials for IR and Mid IR Semiconductors
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [0909028] Funding Source: National Science Foundation
The photoluminescence from a Ga(AsBi) sample is investigated as a function of pump power and lattice temperature. The disorder-related features are analyzed using a Monte Carlo simulation technique. A two-scale approach is introduced to separately account for cluster localization and alloy disorder effects. The corresponding characteristic energy scales of 11 and 45 meV are deduced from the detailed comparison between experiment and simulation.
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