期刊
APPLIED PHYSICS LETTERS
卷 96, 期 21, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3432739
关键词
current density; electrochemical electrodes; elemental semiconductors; hydrogen; II-VI semiconductors; nanoelectromechanical devices; nanolithography; nanostructured materials; p-i-n diodes; semiconductor thin films; short-circuit currents; silicon; solar cells; wide band gap semiconductors; zinc compounds
资金
- Swiss Federal Energy Office [101191]
We propose the use of transparent replicated random nanostructures fabricated via nanoimprinting on glass as next-generation superstrates for thin film silicon solar cells. We validate our approach by demonstrating short-circuit current densities for p-i-n hydrogenated microcrystalline silicon solar cells as high as for state-of-the-art nanotextured ZnO front electrodes. Our methodology opens exciting possibilities to integrate a large variety of nanostructures into p-i-n solar cells and allows to systematically investigate the influence of interface morphology on the optical and electronic properties of the device in order to further improve device performance. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3432739]
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