期刊
APPLIED PHYSICS LETTERS
卷 97, 期 16, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3505311
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资金
- State of Lower Saxony
- German Ministry for the Environment, Nature Conservation, and Nuclear Safety (BMU) [0325050]
Using aluminum oxide (Al2O3) films deposited by high-rate spatial atomic layer deposition (ALD), we achieve very low surface recombination velocities of 6.5 cm/s on p-type and 8.1 cm/s on n-type crystalline silicon wafers. Using spatially separated reaction zones instead of the conventional time-sequenced precursor dosing enables growth rates up to 70 nm/min, whereas conventional ALD limits the growth rate to <2 nm/min. The excellent passivation level is predominantly assigned to a high negative fixed charge density of Q(f)=-(4 +/- 1) x 10(12) cm(-2) in the Al2O3 films. We demonstrate an excellent thermal stability of the passivation quality. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3505311]
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