期刊
APPLIED PHYSICS LETTERS
卷 96, 期 26, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3456379
关键词
electric resistance; electrochemical electrodes; gallium compounds; indium compounds; MIS structures; platinum; point contacts; random-access storage; semiconductor storage; semiconductor thin films; titanium; titanium compounds; zinc compounds
资金
- National Science Council of the Republic of China [NSC-98-3114-M-110-001, NSC 97-2112-M-110-009-MY3]
The InGaZnO taken as switching layer in resistive nonvolatile memory is proposed in this paper. The memory cells composed of Ti/InGaZnO/TiN reveal the bipolar switching behavior that keeps stable resistance ratio of 10(2) with switching responses over 100 cycles. The resistance switching is ascribed to the formation/disruption of conducting filaments upon electrochemical reaction near/at the bias-applied electrode. The influence of electrode material on resistance switching is investigated through Pt/InGaZnO/TiN devices, which perform the unipolar and bipolar behavior as applying bias on Pt and TiN electrode, respectively. Experimental results demonstrate that the switching behavior is selective by the electrode. (C) 2010 American Institute of Physics. [doi:10.1063/1.3456379]
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