期刊
APPLIED PHYSICS LETTERS
卷 97, 期 3, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3467461
关键词
carrier density; interface structure; localised states; metal-semiconductor-metal structures; space-charge-limited conduction
资金
- Korean Ministry of Education, Science and Technology (MEST) [08K1401-00210]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10029953] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [14-2008-01-001-00] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
The reversible resistance switching (RS) effect of the Al/TiOx/TiO2/Al heterostructure is investigated in this study. This RS was attributed to space-charge-limited conduction (SCLC) as controlled by localized traps in the TiOx layer. The preexisting SCLC theory was extended to describe the abrupt resistance transition. An analytical model was developed with consideration of the ratio of free and trapped carrier density, which was extracted from the experimental data to show exponentially distributed traps in energy. The proposed model can be applicable to RS phenomena induced by interface-type traps in other material system. (C) 2010 American Institute of Physics. [doi:10.1063/1.3467461]
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