1/f noise in single-walled carbon nanotube devices

We report the scaling behavior of 1/f noise in single-walled carbon nanotube devices. In this study we use two-dimensional carbon nanotube networks to explore the geometric scaling of 1/f noise and find that for devices of a given resistance the noise scales inversely with device size. We have established an empirical formula that describes this behavior over a wide range of device parameters that can be used to assess the noise characteristics of carbon nanotube-based electronic devices and sensors. (C) 2004 American Institute of Physics.