期刊
APPLIED PHYSICS LETTERS
卷 96, 期 12, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3364135
关键词
annealing; diamond; ion implantation; nitrogen; oxidation; vacancies (crystal)
资金
- Defense Advanced Research Projects Agency [HR0011-09-1-0006]
- The Regents of the University of California
The conversion of neutral nitrogen-vacancy centers to negatively charged nitrogen-vacancy centers is demonstrated for centers created by ion implantation and annealing in high-purity diamond. Conversion occurs with surface exposure to an oxygen atmosphere at 465 degrees C. The spectral properties of the charge-converted centers are investigated. Charge state control of nitrogen-vacancy centers close to the diamond surface is an important step toward the integration of these centers into devices for quantum information and magnetic sensing applications.
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