期刊
APPLIED PHYSICS LETTERS
卷 96, 期 26, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3457349
关键词
electroluminescence; gallium compounds; III-V semiconductors; light emitting diodes; nanoparticles; semiconductor quantum wells; silver; surface plasmon resonance; wide band gap semiconductors
资金
- Korea Science and Engineering Foundation (KOSEF) [R11-2003-022]
The enhanced electroluminescence of GaN-based light-emitting diodes (LEDs) with noble metallic nanoparticles (MNPs) is demonstrated. The sample with well-designed Ag MNPs has shown the best performance enhancement of 126% in electroluminescent intensity compared with a conventional LED sample, even though the MNPs are placed at least 200 nm away from the quantum-well active layer. The MNPs provide enhanced photon scattering and coupling between localized surface plasmon resonance (LSPR) modes and photon modes internally trapped in a device. To investigate this effect, the peculiarities of the LSPR and the corresponding structural properties of the MNPs are discussed through the effective medium approach. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3457349]
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