期刊
APPLIED PHYSICS LETTERS
卷 96, 期 17, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3409139
关键词
aluminium compounds; gallium arsenide; III-V semiconductors; infrared detectors; photodetectors; semiconductor quantum wells
资金
- French Ministry of Defense under a DGA Fellowship
- French Research National Agency [ANR-07-BLAN-0257]
- Agence Nationale de la Recherche (ANR) [ANR-07-BLAN-0257] Funding Source: Agence Nationale de la Recherche (ANR)
A high responsivity GaAs/AlGaAs quantum cascade detector is demonstrated at a wavelength of 15 mu m. The quantum design is optimized for negative bias operation, so that the capture of photoexcited electrons back to the fundamental level is minimized. The detectivity of the detector presented here reaches 1.1x10(12) Jones at 25 K for an applied bias of -0.6 V.
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