期刊
APPLIED PHYSICS LETTERS
卷 96, 期 8, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3327334
关键词
electric resistance measurement; graphene; semiconductor epitaxial layers; silicon compounds; surface resistance; wide band gap semiconductors
资金
- [POIG 01.01.02-00-015/09-00]
- [DWM/N179/PICS-FR/2008]
Single postdielectric resonators operating on their quasi TE(011) modes were used for the measurement of the surface resistance and conductivity of graphene films grown on semi-insulating SiC substrates. With this technique the surface resistance was measured with an uncertainty of +/- 5% and the conductivity was evaluated with an uncertainty equal to the uncertainty in determining the film thickness. The room temperature conductivity of the graphene films proved to be in the range 5x10(6) to 6.4x10(6) S/m.
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