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Carl J. Neufeld et al.
APPLIED PHYSICS LETTERS (2008)
Direct hydrogen gas generation by using InGaN epilayers as working electrodes
J. Li et al.
APPLIED PHYSICS LETTERS (2008)
InN/GaN valence band offset: High-resolution x-ray photoemission spectroscopy measurements
P. D. C. King et al.
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Direct water photoelectrolysis with patterned n-GaN
Ichitaro Waki et al.
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Thermodynamic properties of binary hcp solution phases from special quasirandom structures (vol 74, art no 024204, 2006)
Dongwon Shin et al.
PHYSICAL REVIEW B (2007)
Surface reconstructions on InN and GaN polar and nonpolar surfaces
David Segev et al.
SURFACE SCIENCE (2007)
Band gap and band parameters of InN and GaN from quasiparticle energy calculations based on exact-exchange density-functional theory
P. Rinke et al.
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Phase stability, chemical bonds, and gap bowing of InxGa1-xN alloys:: Comparison between cubic and wurtzite structures
C. Caetano et al.
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Hybrid functionals based on a screened Coulomb potential (vol 118, pg 8207, 2003)
Jochen Heyd et al.
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Photoelectrochemical properties of InGaN for H2 generation from aqueous water
K Fujii et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS (2005)
First-principles calculation for bowing parameter of wurtzite InxGa1-xN
BT Liou et al.
OPTICS COMMUNICATIONS (2005)
Temperature dependence of the fundamental band gap of InN
J Wu et al.
JOURNAL OF APPLIED PHYSICS (2003)
Band parameters for nitrogen-containing semiconductors
I Vurgaftman et al.
JOURNAL OF APPLIED PHYSICS (2003)
First-principles investigation of lattice constants and bowing parameters in wurtzite AlxGa1-xN, InxGa1-xN and InxAl1-xN alloys
Z Dridi et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2003)
Effect of composition on the band gap of strained InxGa1-xN alloys
MD McCluskey et al.
JOURNAL OF APPLIED PHYSICS (2003)
Small band gap bowing in In1-xGaxN alloys
J Wu et al.
APPLIED PHYSICS LETTERS (2002)
Electron affinity of AlxGa1-xN(0001) surfaces
SP Grabowski et al.
APPLIED PHYSICS LETTERS (2001)