期刊
APPLIED PHYSICS LETTERS
卷 96, 期 5, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3304786
关键词
current density; electrochemical electrodes; gallium compounds; hole mobility; hydrogen production; III-V semiconductors; indium compounds; photoconductivity; photoelectrochemical cells; wide band gap semiconductors
资金
- NSF [DRM-0906879]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [0906879] Funding Source: National Science Foundation
Photoelectrochemical effects in p-InxGa1-xN (0 < x < 0.22) alloys have been investigated. Hydrogen generation was observed in p-InGaN semiconducting electrodes under white light illumination with additional bias. It was found that p-InGaN alloys possess much higher conversion efficiencies than p-GaN. Time dependent photocurrent density characteristics showed that the stability of p-InGaN in aqueous HBr is excellent. The photocurrent density was found to increase almost linearly with hole mobility and excitation light intensity.
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