4.6 Article

Nonvolatile nano-floating gate memory devices based on pentacene semiconductors and organic tunneling insulator layers

期刊

APPLIED PHYSICS LETTERS
卷 96, 期 3, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.3297878

关键词

gold; organic semiconductors; polymer films; random-access storage

资金

  1. NRF/MEST [R11-2005-048-00000-0]
  2. Korea Ministry of Knowledge Economy
  3. Korea government (MEST) [313-2008-2-D00597, 2008-0059952, 2009-0077593]
  4. World Gold Council [RP05-08]
  5. Kookmin University
  6. National Research Foundation of Korea [2008-0059952] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

Controlled gold nanoparticle (Au-NP)-based nonvolatile memory devices were developed based on pentacene organic transistors and polymethylmethacrylate (PMMA) insulator layers. The memory device had the following configuration: n+Si gate/SiO2 blocking oxide/polyelectrolytes/Au-NP/PMMA tunneling dielectric layer/Au source-drain. According to the programming/erasing operations, the memory device showed good programmable memory characteristics with a large memory window. In addition, good reliability was confirmed by the data retention characteristics. The fabrication procedures for the charge trapping and tunneling layers were based on simple solution processes (by dipping and spin-coating) and the maximum processing temperature was < 100 degrees C, so this method has potential applications in plastic/flexible electronics.

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