相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Resistance transition in metal oxides induced by electronic threshold switching
D. Ielmini et al.
APPLIED PHYSICS LETTERS (2009)
Large 1/f noise of unipolar resistance switching and its percolating nature
S. B. Lee et al.
APPLIED PHYSICS LETTERS (2009)
Modeling of Set/Reset Operations in NiO-Based Resistive-Switching Memory Devices
Carlo Cagli et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2009)
Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices
Ugo Russo et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2009)
Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices
Ugo Russo et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2009)
Nanoscale formation mechanism of conducting filaments in NiO thin films
C. H. Kim et al.
SOLID STATE COMMUNICATIONS (2009)
Resistance switching in amorphous and crystalline binary oxides grown by electron beam evaporation and atomic layer deposition
S. Spiga et al.
MICROELECTRONIC ENGINEERING (2008)
Nanoionics-based resistive switching memories
RaineR Waser et al.
NATURE MATERIALS (2007)
Analytical model for subthreshold conduction and threshold switching in chalcogenide-based memory devices
Daniele Ielmini et al.
JOURNAL OF APPLIED PHYSICS (2007)
Individual charge traps in silicon nanowires - Measurements of location, spin and occupation number by Coulomb blockade spectroscopy
M. Hofheinz et al.
EUROPEAN PHYSICAL JOURNAL B (2006)
Template synthesis and magnetoresistance property of Ni and Co single nanowires electrodeposited into nanopores with a wide range of aspect ratios
T Ohgai et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2003)
On the switching behaviour of post-breakdown conduction in ultra-thin SiO2 films
TP Chen et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2001)
分享论文
