4.6 Article

Photoinduced inverse spin-Hall effect: Conversion of light-polarization information into electric voltage

期刊

APPLIED PHYSICS LETTERS
卷 96, 期 8, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.3327809

关键词

gallium arsenide; III-V semiconductors; light polarisation; photodetectors; photoelectricity; platinum; spin Hall effect; spin polarised transport

资金

  1. MEXT, Japan [19048028]
  2. NEDO, Japan
  3. TRF, Japan
  4. JSPS
  5. EPSRC [EP/F024045/1] Funding Source: UKRI
  6. Engineering and Physical Sciences Research Council [EP/F024045/1] Funding Source: researchfish

向作者/读者索取更多资源

The photoinduced inverse spin-Hall effect was observed in a Pt/GaAs hybrid structure. In the GaAs layer, circularly polarized light generates spin-polarized carriers, inducing a pure spin current into the Pt layer through the interface. This pure spin current is, by the inverse spin-Hall effect in the Pt layer, converted into electric voltage. By changing the direction and ellipticity of the circularly polarized light, the electromotive force varies systematically, consistent with the prediction of the photoinduced inverse spin-Hall effect. The observed phenomenon allows the direct conversion of circular-polarization information into electric voltage; this phenomenon can be used as a spin photodetector.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据