期刊
APPLIED PHYSICS LETTERS
卷 96, 期 5, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3280078
关键词
bismuth compounds; electrical conductivity; Seebeck effect; semiconductor materials; semiconductor thin films
资金
- DARPASRC
- U.S. AFOSR [A9550-08-1-0100]
The authors report on graphene-like exfoliation of the large-area crystalline films and ribbons of bismuth telluride with the thicknesses of a few atoms. It is demonstrated that Bi2Te3 crystal can be mechanically separated into its building blocks-Te-Bi-Te-Bi-Te atomic fivefolds-with the thickness of similar to 1 nm and even further-to subunits with smaller thicknesses. The atomically-thin films can be structured into suspended crystalline ribbons providing quantum confinement in two dimensions. The quasi two-dimensional crystals of bismuth telluride revealed high electrical conductivity and low thermal conductivity. The proposed atomic-layer engineering of bismuth telluride opens up a principally new route for drastic enhancement of the thermoelectric figure of merit.
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