期刊
APPLIED PHYSICS LETTERS
卷 97, 期 24, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3525932
关键词
-
资金
- Deutsche Forschungsgemeinschaft [Sonderforschungsbereich 762]
- Graduate School Leipzig School of Natural Sciences-BuildMoNa
- European Research Council [PTDC/CTM/73943/2006, PTDC/EEA-ELC/64975/2006]
- Portuguese Science Foundation (FCT-MCTES)
We have investigated the electrical properties of metal-semiconductor field-effect transistors (MESFET) based on amorphous oxide semiconductor channels. All functional parts of the devices were sputter-deposited at room temperature. The influence on the electrical properties of a 150 degrees C annealing step of the gallium-indium-zinc-oxide channel is investigated. The MESFET technology offers a simple route for processing of the transistors with excellent electrical properties such as low subthreshold swing of 112 mV/decade, gate sweep voltages of 2.5 V, and channel mobilities up to 15 cm(2)/V s. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3525932]
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据