Using contactless electroreflectance, we determined the band gap of the two known phases of epitaxial ZnSnP2. Induced by small changes in Sn/Zn flux ratio during epitaxy, the order-disordered transition between the chalcopyrite and sphalerite phases reduces the band gap by 300 meV. The chalcopyrite ordered phase, unambiguously identified from x-ray diffraction, exhibits a band gap of 1.683 eV at 293 K. The band gap of the disordered sphalerite phase is 1.383 eV. Using the volume-averaged order parameter measured on the chalcopyrite sample, we find that its morphology is best described by the presence of perfectly ordered domains inside a disordered matrix. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3442917]
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