期刊
APPLIED PHYSICS LETTERS
卷 96, 期 10, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3360227
关键词
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资金
- NSF [ECS 0506902]
- AFOSR
- ONR
Conductive atomic force microscopy, scanning electron microscopy, and x-ray diffraction were used to determine the effects of Ga/N flux ratio on the conductivity of current leakage paths in GaN grown by molecular beam epitaxy. Our data reveal a band of fluxes near Ga/N approximate to 1 for which these pathways ceased to be observable. We conclude that changes in surface defects surrounding or impurities along screw-component threading dislocations are responsible for their conductive nature. These observations suggest a method for controlling the primary source of reverse-bias Schottky contact leakage in n-type GaN grown by molecular beam epitaxy. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3360227]
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