期刊
APPLIED PHYSICS LETTERS
卷 97, 期 24, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3527089
关键词
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资金
- NSF [ECCS-0854619]
- Ed and Linda Whitacre Endowed Chair positions through the AT T Foundation
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [0854619] Funding Source: National Science Foundation
We report the characteristics of an erbium-doped GaN semiconductor waveguide amplifier grown by metal-organic chemical vapor deposition. We demonstrated that both 980 and 1480 nm optical pumping were efficient to create population inversion between the (4)I(13/2) and (4)I(15/2) energy levels. The carrier lifetime in the (4)I(13/2) energy band was measured to be approximately 1.5 ms in room temperature, which is slightly shorter than that in erbium-doped silica due to the interaction between the erbium ions and the semiconductor lattice structure. But it is significantly longer than the carrier lifetime in a typical semiconductor optical amplifier which is in the nanosecond regime. (C) 2010 American Institute of Physics. [doi:10.1063/1.3527089]
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