期刊
APPLIED PHYSICS LETTERS
卷 97, 期 3, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3467056
关键词
aluminium compounds; gallium compounds; high electron mobility transistors; III-V semiconductors; II-VI semiconductors; interface structure; MIS devices; semiconductor epitaxial layers; surface treatment; wide band gap semiconductors; zinc compounds
资金
- National Science Council of Taiwan, Republic of China
The AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) with ZnO gate insulator deposited using a vapor cooling condensation system were fabricated. The AlGaN surface treatment using (NH4)(2)S-x was performed to improve the quality of the interface between the ZnO layer and AlGaN layer. The (NH4)(2)S-x-treated MOS-HEMTs exhibited a higher saturation drain-source current of 0.74 A/mm, a maximum extrinsic transconductance of 200 mS/mm, an unit gain cutoff frequency of 9.1 GHz, a maximum frequency of oscillation of 17.1 GHz, and the Hooge's coefficient of 8.28x10(-6). The improved performances of the (NH4)(2)S-x-treated MOS-HEMTs were attributed to the reduction in surface states. (C) 2010 American Institute of Physics. [doi:10.1063/1.3467056]
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据