Analysis of InGaN-delta-InN quantum wells for light-emitting diodes

The design of InGaN-delta-InN quantum wells (QWs) leads to significant redshift for nitride active region with large electron-hole wave function overlap (Gamma(e)_(hh)) and spontaneous emission rate. The analysis was carried out by using self-consistent six-band k . p band formalism. The design of active region consisting of 30 angstrom In(0.25)Ga(0.75)N QW with InN delta-layer leads to large Gamma(e)_(hh) of >50% with emission wavelength in the yellow and red spectral regimes, which is applicable for nitride-based light-emitting diodes. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3493188]