期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
卷 43, 期 11B, 页码 7899-7902出版社
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.43.7899
关键词
high-k dielectrics; interface; mobility
Analysis of electrical and scanning transmission electron microscopy (STEM) and electron energy loss spectra (EELS) data suggests that Hf-based high-k dielectrics deposited on a SiO2 layer modifies the oxygen content of the latter resulting in reduction of the oxide energy band gap and correspondingly increasing its k value. High-k deposition on thinner SiO2 films, below 1.1 nm, may lead to the formation of a highly oxygen deficient amorphous interfacial layer adjacent to the Si substrate. This layer was identified as an important factor contributing to mobility degradation in high-k transistors.
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