期刊
APPLIED PHYSICS LETTERS
卷 96, 期 21, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3435481
关键词
amorphous semiconductors; diffraction gratings; elemental semiconductors; photoconductivity; semiconductor junctions; semiconductor thin films; silicon; solar cells; thin film devices
资金
- Swiss National Science Foundation [200021 12577/1]
Angle resolved measurements of the external quantum efficiency of n-i-p single junction amorphous solar cell deposited on a grating structure show clearly defined peaks of enhanced photocurrent in the weakly absorbing region between 1.6 and 2.15 eV. We explain these absorption phenomena and their angular variation with the excitation of guided modes via grating coupling. Calculation using an equivalent flat multilayer system permits to relate the theoretical values with the experimental data. (C) 2010 American Institute of Physics. [doi:10.1063/1.3435481]
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据