期刊
APPLIED PHYSICS LETTERS
卷 97, 期 6, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3478230
关键词
amorphous semiconductors; carbon; metal clusters; palladium; semiconductor doping; semiconductor thin films; silicon compounds; solar cells; sputter deposition; substrates
资金
- Ministry of Education of China [708061]
- Natural Science Foundation of China [10974258]
- Program for New Century Excellent Talents in University [NCET-08-0844]
The Pd doped amorphous carbon (a-C:Pd) films were deposited on n-Si substrates with or without a native SiO2 layer using magnetron sputtering. The photovoltaic characteristics of the a-C:Pd/SiO2/Si and a-C:Pd/Si junctions were studied. It is found that under light illumination of 15 mW/cm(2) at room temperature, the a-C:Pd/SiO2/Si solar cell fabricated at 350 degrees C has a high power conversion efficiency of 4.7%, which is much better than the a-C/Si junctions reported before. The enhanced conversion efficiency is ascribed to the Pd doping and the increase in sp(2)-bonded carbon clusters in the carbon film caused by the high temperature deposition. (C) 2010 American Institute of Physics. [doi:10.1063/1.3478230]
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