相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
Rainer Waser et al.
ADVANCED MATERIALS (2009)
Role of TaON interface for CuxO resistive switching memory based on a combined model
P. Zhou et al.
APPLIED PHYSICS LETTERS (2009)
The conical shape filament growth model in unipolar resistance switching of TiO2 thin film
Kyung Min Kim et al.
APPLIED PHYSICS LETTERS (2009)
Formation of multiple conductive filaments in the Cu/ZrO2:Cu/Pt device
Qi Liu et al.
APPLIED PHYSICS LETTERS (2009)
Excellent Switching Uniformity of Cu-Doped MoOx/GdOx Bilayer for Nonvolatile Memory Applications
Jaesik Yoon et al.
IEEE ELECTRON DEVICE LETTERS (2009)
Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications
Ch. Walczyk et al.
JOURNAL OF APPLIED PHYSICS (2009)
Highly uniform resistive switching characteristics of TiN/ZrO2/Pt memory devices
B. Sun et al.
JOURNAL OF APPLIED PHYSICS (2009)
Random circuit breaker network model for unipolar resistance switching
Seung Chul Chae et al.
ADVANCED MATERIALS (2008)
Electrical evidence of unstable anodic interface in Ru/HfOx/TiN unipolar resistive memory
Heng Yuan Lee et al.
APPLIED PHYSICS LETTERS (2008)
Low current resistive switching in Cu-SiO2 cells
C. Schindler et al.
APPLIED PHYSICS LETTERS (2008)
Effect of top electrode material on resistive switching properties of ZrO2 film memory devices
Chih-Yang Lin et al.
IEEE ELECTRON DEVICE LETTERS (2007)
A low-power nonvolatile switching element based on copper-tungsten oxide solid electrolyte
Michael N. Kozicki et al.
IEEE TRANSACTIONS ON NANOTECHNOLOGY (2006)
Resistive switching in Pt/Al2O3/TiO2/Ru stacked structures
Kyung Min Kim et al.
ELECTROCHEMICAL AND SOLID STATE LETTERS (2006)
分享论文
