期刊
APPLIED PHYSICS LETTERS
卷 97, 期 2, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3464323
关键词
-
资金
- Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, of the U. S. Department of Energy [DE-AC02-05CH11231]
- NDSEG
ZnO1-xSex alloys with Se substitutional composition x < 0.12 were synthesized using pulsed laser deposition. Incorporation of small concentrations of Se results in a greater than 1 eV red shift in the ZnO optical absorption edge which is quantitatively explained in the framework of the band anticrossing model. The Se defect level is found to be located at 0.9 eV above the ZnO valence band and the band anticrossing coupling constant is determined to be 1.2 eV. These parameters allow prediction of the composition dependence of the band gap as well as the conduction and the valence band offsets in the full composition range of ZnO1-xSex alloys. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3464323]
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据