Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device

Highly stable and reproducible bipolar resistive switching effects are reported on Cu/AlN/Pt devices. Memory characteristics including large memory window of 10(3), long retention time of >10(6) s and good endurance of >10(3) were demonstrated. It is concluded that the reset current decreases as compliance current decreases, which provides an approach to suppress power consumption. The dominant conduction mechanisms of low resistance state and high resistance state were verified by Ohmic behavior and trap-controlled space charge limited current, respectively. The memory effect is explained by the model concerning redox reaction mediated formation and rupture of the conducting filament in AlN films. (C) 2010 American Institute of Physics. [doi:10.1063/1.3483158]