期刊
APPLIED PHYSICS LETTERS
卷 97, 期 8, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3483158
关键词
aluminium compounds; copper; III-V semiconductors; platinum; random-access storage; semiconductor storage
资金
- National Hi-tech (R&D) Project of China [2009AA034001]
- National Natural Science Foundation of China [50772055, 50871060]
- National Basic Research Program of China [2010CB832905]
Highly stable and reproducible bipolar resistive switching effects are reported on Cu/AlN/Pt devices. Memory characteristics including large memory window of 10(3), long retention time of >10(6) s and good endurance of >10(3) were demonstrated. It is concluded that the reset current decreases as compliance current decreases, which provides an approach to suppress power consumption. The dominant conduction mechanisms of low resistance state and high resistance state were verified by Ohmic behavior and trap-controlled space charge limited current, respectively. The memory effect is explained by the model concerning redox reaction mediated formation and rupture of the conducting filament in AlN films. (C) 2010 American Institute of Physics. [doi:10.1063/1.3483158]
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据