期刊
APPLIED PHYSICS LETTERS
卷 97, 期 20, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3517491
关键词
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资金
- NSF [ECCS-0824273, DMR-1007051, DGE-0903720]
- AFOSR [FA9550-08-1-0198, FA9550-09-1-0270]
- DoD through NSSEFF [N00244-09-1-0091]
- U.S. Department of Energy, Office of Basic Energy Sciences [DE-AC52-06NA25396]
- Sandia National Laboratories [DE-AC04-94AL85000]
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1002387] Funding Source: National Science Foundation
We report on the photoconductance characteristics of indium tin oxide (ITO)-GaAs photodetectors based on patterned nanopillar (NP) arrays grown by metal-organic chemical vapor deposition. The NPs are partially encapsulated by commercially available polymer to allow transparent ITO contact to exposed NP tips. Under illumination, the NP photodetectors demonstrate photoconductive gain in both forward and reverse bias. The mechanism for photoconductive gain is attributed to both the lowering of the Schottky barrier at the ITO-GaAs interface by photogenerated holes, and also the increase in the conduction volume of the NPs under illumination. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3517491]
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