期刊
APPLIED PHYSICS LETTERS
卷 96, 期 5, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3301262
关键词
carrier lifetime; current density; dielectric polarisation; electron-hole recombination; gallium compounds; III-V semiconductors; indium compounds; photovoltaic effects; piezoelectricity; semiconductor diodes; semiconductor heterojunctions; wide band gap semiconductors
资金
- Laboratory Directed Research and Development program
- United States Department of Energy's National Nuclear Security Administration [DE-AC04-94AL85000]
The impact of piezoelectric polarization and nonradiative recombination on the short-circuit current densities (J(sc)) of (0001) face GaN/InGaN photovoltaic devices is demonstrated. P-i-n diodes consisting of 170 nm thick intrinsic In0.09Ga0.91N layers sandwiched by GaN layers exhibit low J(sc)similar to 40 mu A/cm(2). The piezoelectric polarization at the GaN/InGaN heterointerfaces creates drift currents opposite in direction needed for efficient carrier collection. Also, nonradiative recombination centers produce short carrier lifetimes, limiting J(sc). Alternative structures with intrinsic InGaN layers sandwiched by n-type InGaN or graded InyGa1-yN (y=0-0.09) layer and a p-type In0.015Ga0.985N layer have favorable potentials, longer carrier lifetimes, and improve J(sc) to similar to 0.40 mA/cm(2).
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