期刊
APPLIED PHYSICS LETTERS
卷 97, 期 25, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3531559
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资金
- National Basic Research Program of China (973 Program) [2010CB934200]
- National Key Project [2009ZX-02302-004, 2009ZX-02023-005-1]
- Hi-Tech Research and Development Program of China (863 Program) [2008AA031403]
A high-kappa based charge trap flash (CTF) memory structure using bandgap engineered trapping layer HfO2/Al2O3/HfO2 (HAH) has been demonstrated for multilevel cell applications. Compared to a single HfO2 trapping layer, a CTF memory device based on the HAH trapping layer exhibits a larger memory window of 9.2 V, faster program/erase speed, and significantly improved data retention. Enhancements of memory performance and reliability are attributed to the modulation of charge distribution by bandgap engineering in trapping layer. The findings provide a guide for future design of CTF. (C) 2010 American Institute of Physics. [doi:10.1063/1.3531559]
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