期刊
APPLIED PHYSICS LETTERS
卷 96, 期 19, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3428365
关键词
diffusion; electrical conductivity transitions; electrical resistivity; elemental semiconductors; ferromagnetic materials; II-VI semiconductors; magnetic semiconductors; magnetic thin films; manganese; metal-semiconductor-metal structures; platinum; semiconductor thin films; semiconductor-metal boundaries; silicon; vacancies (crystal); wide band gap semiconductors; zinc compounds
资金
- Singapore National Research Foundation [NRF-G-CRP2007-01]
We carry out a comparative study on resistive switching in Mn-doped ZnO thin films; samples grown on Pt and Si show unipolar and bipolar switching behaviors, respectively. Fittings of the current-voltage curves and area dependence of the device resistance reveal the filamentary conduction in Pt/Mn:ZnO/Pt. On the other hand, the interfacial effect dominates in Pt/Mn:ZnO/Si, and its low resistance state exponentially relaxes toward the high resistance state in contrast to the good data retention in Pt/Mn:ZnO/Pt. Our results suggest that selecting electrodes dictates the resistive switching mechanism presumably by affecting the migration dynamics of oxygen vacancies. (C) 2010 American Institute of Physics. [doi:10.1063/1.3428365]
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