期刊
APPLIED PHYSICS LETTERS
卷 96, 期 15, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3397985
关键词
amorphous semiconductors; crystallisation; graphite; graphitisation; nickel; silicon; silicon compounds; X-ray diffraction
资金
- DARPA [FA8650-08-C-7838]
- DOE [DE-AC02-98CH-10886]
We examine graphitization of amorphous carbon (a-C) in a-C/Ni bilayer samples having the structure Si/SiO(2)/a-C(3-30 nm)/Ni(100 nm). In situ x-ray diffraction (XRD) measurements during heating in He at 3 degrees C/s to 1000 degrees C showed graphitic C formation beginning at temperatures T of 640-730 degrees C, suggesting graphitization by direct metal-induced crystallization, rather than by a dissolution/precipitation mechanism in which C is dissolved during heating and expelled from solution upon cooling. We also find that graphitic C, once formed, can be reversibly dissolved by heating to T>950 degrees C, and that nongraphitic C can be volatilized by annealing in H(2)-containing ambients.
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