期刊
APPLIED PHYSICS LETTERS
卷 96, 期 19, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3428965
关键词
absorption coefficients; annealing; hafnium compounds; high-k dielectric thin films; localised states; nanofabrication; nanostructured materials; spectrophotometry; sputter deposition; wide band gap semiconductors; X-ray diffraction
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Nanocrystalline monoclinic HfO2 films were sputter deposited on fused silica substrates, air annealed at 573 to 1273 K to affect crystallite growth, and analyzed by x-ray diffraction and spectrophotometry. Lattice expansion occurs with diminishing crystallite size. O 2p -> Hf 5d interband absorption dominates the optical edge at energy E >= 6.24 eV, with an optical band gap, E-o = 5.48 +/- 0.023, which is independent of crystallite size. However, the strength of a localized resonant band, with onset at 5.65 eV and maximum at 5.94 eV, is affected by crystallite size. Its polaronic origin in a perfect HfO2 lattice is discussed.(C) 2010 American Institute of Physics. [doi:10.1063/1.3428965]
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