期刊
APPLIED PHYSICS LETTERS
卷 96, 期 25, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3456729
关键词
atomic force microscopy; bismuth compounds; compressive strength; epitaxial layers; ferroelectric thin films; internal stresses; lattice constants; multiferroics; pulsed laser deposition; self-assembly; X-ray diffraction
资金
- Nangyang Technological University
- Ministry of Education of Singapore [AcRF RG 21/07, ARC 16/08]
BiFeO3 thin films with various thicknesses were grown epitaxially on (001) LaSrAlO4 single crystal substrates using pulsed laser deposition. High resolution x-ray diffraction measurements revealed that a tetragonal-like phase with c-lattice constant similar to 4.65 A degrees is stabilized by a large misfit strain. Besides, a rhombohedral-like phase with c-lattice constant similar to 3.99 A degrees was also detected at film thickness of similar to 50 nm and above to relieve large misfit strains. In-plane piezoelectric force microscopy studies showed clear signals and self-assembled nanoscale stripe domain structure for the tetragonal-like regions. These findings suggest a complex picture of nanoscale domain patterns in BiFeO3 thin films subjected to large compressive strains. (C) 2010 American Institute of Physics. [doi:10.1063/1.3456729]
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