相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Domain wall creep in (Ga,Mn)As
A. Kanda et al.
APPLIED PHYSICS LETTERS (2010)
Exchange constant and domain wall width in (Ga,Mn)(As,P) films with self-organization of magnetic domains
S. Haghgoo et al.
PHYSICAL REVIEW B (2010)
Nonadiabatic spin-transfer torque in (Ga,Mn)As with perpendicular anisotropy
J. -P. Adam et al.
PHYSICAL REVIEW B (2009)
Nonadiabatic spin-transfer torque in real materials
Ion Garate et al.
PHYSICAL REVIEW B (2009)
Intrinsic Coupling between Current and Domain Wall Motion in (Ga,Mn)As
Kjetil Magne Dorheim Hals et al.
PHYSICAL REVIEW LETTERS (2009)
Strain control of the magnetic anisotropy in (Ga,Mn) (As,P) ferromagnetic semiconductor layers
A. Lemaitre et al.
APPLIED PHYSICS LETTERS (2008)
Molecular beam epitaxy grown (Ga,Mn)(As,P) with perpendicular to plane magnetic easy axis
A. W. Rushforth et al.
JOURNAL OF APPLIED PHYSICS (2008)
Spin-transfer physics and the model of ferromagnetism in (Ga, Mn)As
Hideo Ohno et al.
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS (2008)
Magnetic reversal under external field and current-driven domain wall motion in (Ga,Mn)As: influence of extrinsic pinning
K. Y. Wang et al.
NEW JOURNAL OF PHYSICS (2008)
Universality classes for domain wall motion in the ferromagnetic semiconductor (Ga, Mn)As
M. Yamanouchi et al.
SCIENCE (2007)
Domain structure and magnetic anisotropy fluctuations in (Ga,Mn)As:: Effect of annealing
A. Dourlat et al.
JOURNAL OF APPLIED PHYSICS (2007)
Domain imaging and domain wall propagation in (Ga, Mn)As thin films with tensile strain
K. Y. Wang et al.
JOURNAL OF APPLIED PHYSICS (2007)
Velocity of domain-wall motion induced by electrical current in the ferromagnetic semiconductor (Ga,Mn)As
M Yamanouchi et al.
PHYSICAL REVIEW LETTERS (2006)
Theory of current-driven domain wall motion: Spin transfer versus momentum transfer
G Tatara et al.
PHYSICAL REVIEW LETTERS (2004)
Very high spin polarization in GaAs by injection from a (Ga,Mn)As Zener diode
P Van Dorpe et al.
APPLIED PHYSICS LETTERS (2004)