期刊
APPLIED PHYSICS LETTERS
卷 97, 期 26, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3532095
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资金
- EU [IST-015728, 214499]
- EPSRC-UK [EP/H002294/01]
- EPSRC-NSFC [10911130232/A0402]
- Chinese Academy of Sciences
- Kurata Memorial Hitachi Science and Technology Foundation
- Sumitomo Foundation
- EPSRC [EP/H003487/1]
- [1948027]
- EPSRC [EP/H003487/1, EP/H002294/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/H003487/1, EP/H002294/1] Funding Source: researchfish
Current-driven magnetic domain wall motion is demonstrated in the quaternary ferromagnetic semiconductor (Ga,Mn)(As,P) at temperatures well below the ferromagnetic transition temperature, with critical currents of the order 10(5) A cm(-2). This is enabled by a much weaker domain wall pinning compared to (Ga,Mn)As layers grown on a strain-relaxed buffer layer. The critical current is shown to be comparable with theoretical predictions. The wide temperature range over which domain wall motion can be achieved indicates that this is a promising system for developing an improved understanding of spin-transfer torque in systems with strong spin-orbit interaction. (C) 2010 American Institute of Physics. [doi:10.1063/1.3532095]
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