By examining two types of lateral InGaN/GaN light emitting diodes with different contact patterns, we demonstrate that in the intermediate range of current where the space-charge region dominates in the device performance, the ideality factor (beta) increases from 1.9 (current spreading design) up to 2.4 (urrent crowding design). This modification of beta-factor could be erroneously treated as the change of free carrier recombination nature. The current crowding design is also responsible for the local overheating and heavier efficiency droop that occurs at the characteristic current 2.3 times smaller in comparison with the current spreading design. (C) 2010 American Institute of Physics. [doi:10.1063/1.3529470]
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据