期刊
APPLIED PHYSICS LETTERS
卷 97, 期 3, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3458707
关键词
chemical interdiffusion; discharges (electric); doping profiles; elemental semiconductors; internal stresses; ion implantation; lithium; particle size; reaction kinetics; semiconductor doping; silicon
资金
- Air Force Office of Scientific Research MURI [F9550-06-1-0326]
- National Science Foundation [0729520]
- Directorate For Engineering
- Div Of Civil, Mechanical, & Manufact Inn [0729520] Funding Source: National Science Foundation
Using a fully-coupled diffusion-elasticity model with Butler-Volmer surface kinetics, we simulate the insertion of lithium into spherical silicon particles. Simulations predict the evolution of concentration, displacements, and stresses in the particles during the first insertion of Li. The particle response depends strongly on the reaction kinetics and the resulting stresses can be above the tensile failure stress of silicon depending on the particle size and discharge rate. (C) 2010 American Institute of Physics. [doi:10.1063/1.3458707]
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据