期刊
APPLIED PHYSICS LETTERS
卷 96, 期 19, 页码 -出版社
AIP Publishing
DOI: 10.1063/1.3429086
关键词
aluminium compounds; density functional theory; III-V semiconductors; impurity states; magnesium; oxygen; semiconductor doping; wide band gap semiconductors
资金
- NSC [SNIC001-09-160]
- Swedish Foundation for Strategic Research
- Hungarian OTKA [K-67886]
- Hungarian Academy of Sciences
We systematically studied the group-II acceptors in wurtzite AlN by screened hybrid density functional calculations. We show that the shallowest isolated group-II substitutional defect is Mg, while codoping of Mg and O may yield even shallower acceptor level. (C) 2010 American Institute of Physics. [doi:10.1063/1.3429086]
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