Fabrication of p-channel thin-film transistors using CuO active layers deposited at low temperature

We investigated copper oxides for use as an active layer of p-channel field-effect thin-film transistors (TFTs). Cu(2)O thin films deposited at room temperature using rf magnetron sputtering were transformed to a CuO phase after an annealing treatment in air above 200 degrees C. The optical bandgaps of the Cu(2)O and CuO were 2.44 and 1.41 eV, respectively. The bottom gate structured TFTs fabricated using CuO active layers operated in a p-type enhancement mode with an on/off ratio of similar to 10(4) and field-effect mobility of 0.4 cm(2)/V.s. (C) 2010 American Institute of Physics. [doi:10.1063/1.3521310]