期刊
APPLIED PHYSICS LETTERS
卷 96, 期 13, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3364133
关键词
bismuth compounds; charge exchange; dielectric thin films; epitaxial growth; spectral line shift
资金
- U.S. DOE [DE-FG02-01ER45885, DE-AC02-05CH1123]
- NSF [DMR-0820404, DMR0908718]
- ARO [W911NF-08-2-0032]
- U.S. Department of Energy (DOE) [DE-FG02-01ER45885] Funding Source: U.S. Department of Energy (DOE)
Optical transmission spectroscopy and spectroscopic ellipsometry were used to extract the optical properties of an epitaxially grown quasi-tetragonal BiFeO3 thin film in the near infrared to near ultraviolet range. The absorption spectrum is overall blue shifted compared with that of rhombohedral BiFeO3, with an absorption onset near 2.25 eV, a direct 3.1 eV band gap, and charge transfer excitations that are similar to 0.4 eV higher than those of the rhombohedral counterpart. We interpret these results in terms of structural strain and local symmetry breaking.
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