In-plane thermal and thermoelectric properties of misfit-layered [(PbSe)0.99]x(WSe2)x superlattice thin films

The in-plane thermal conductivity is measured to be three times lower in misfit-layered [(PbSe)(0.99)](x)(WSe2)(x) superlattice thin films than disordered-layered WSe2 because of interface scattering despite a higher cross-plane value in the former than the latter. While having little effect on the in-plane thermal conductivity, annealing the p-type [(PbSe)(0.99)](2)(WSe2)(2) films in Se increases the in-plane Seebeck coefficient and electrical conductivity because of decreased defect and hole concentrations. Increasing interface density of the annealed films by decreasing x from 4 to 2 has weak influence on the in-plane thermal conductivity but increases the Seebeck coefficient and decreases the room-temperature electrical conductivity. (C)2010 American Institute of Physics. [doi:10.1063/1.3428577]