期刊
APPLIED PHYSICS LETTERS
卷 97, 期 4, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3466915
关键词
ageing; current density; electron traps; light emitting devices; organic field effect transistors; photoluminescence
资金
- MEXT, Japan [17069003, 22656003]
- Grants-in-Aid for Scientific Research [22656003, 17069003] Funding Source: KAKEN
We report the improvement of electron transport in 5,5'-bis(biphenylyl)-2,2':5',2 ''-terthiophene (BP3T) single crystals on a field-effect transistor configuration by systematically investigating the effects of device aging under pure nitrogen and optimizing the organic dielectric layer-fabrication process. We reduced the effect of electron traps and achieved extremely high current densities up to 10 kA/cm(2), which is one or two orders of magnitude greater than the current densities achieved in previous devices. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3466915]
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